Etisalat Free Browsing and Downloading Unlimited With Simple Server (PC, Android & Symbian USERS) 2015

No much waste of time, etisalat is crazily rocking on simple server… I know etisalat tweak doesn’t last but this one has been rocking since yesterday. Atleast with this, you can download whatever you want or can think before it will be hijacked by uncoded eti staffs. But might be very slow in surfing; but best in downloading. Just edit your simple server to what is below.

How To Setup Simple server For PC Users

L H O S T = ' 1 2 7 . 0 . 0 . 1 '

I M E T H O D = 1

I S P L I T = 0

R H T T P = 0

T I M E O U T = 6 0

P H O S T = ' 1 9 4 . 1 7 0 . 1 8 7 . 9 '

R Q U E R Y = ' '

R P A T H = 0

P T Y P E = 0

K E E P = ' '

B Q U E R Y = ' '

MQ U E R Y = ' '

R H T T P S = 1

P P O R T = 8 0

L P O R T = 8 0 8 0

V A L H D R 1 = ' '

V A L H D R 2 = ' '

V A L H D R 3 = ' '

I Q U E R Y = ' www . e t i s a l a t . c om . n g '

A DMO D E = 0

C Q U E R Y = ' '

C U S H D R 2 = ' '

C U S H D R 3 = ' '

C U S H D R 1 = ' '

I L I N E = 0

F Q U E R Y = ' '

S B U F F = 1 0 2 4

R P O R T = 0

How To setup Simple server For Android & Symbian phone Users

Access Point :- Default

Local Host :- 127.0.0.1

Local Port :- 8080

HTTP Query :-

Front Query : Non

Middle Query : None

Back Query : None

Reverse Query : None

Inject Query : www.etisalat.com.ng

Inject Method : HEAD

Inject Newline : \r\n

Inject Splitline : Default

HTTP Header :-

Custom Header 1 : Host

Header Value 1 : music.vodafone.com.tr Custom Header 2 : None

Header Value 2 : None

Custom Header 3 : None

Header Value 3 : None

Custom Header 4 : None

Header Value 4 : None

Proxy Host :- ' 194.170.187.9 '

Proxy Port : - 80

Then the Set IP and port for PC ,andriod & symbian to :

Ip:127.0.0.1

port: 8080

Mind you, this is not a bb plan, it doesn’t require any airtime or mb.. just Connect, surf and keep downloading until you are tired of downloading. 

DOWNLOAD ETISALAT SIMPLE SERVER HERE FOR PC

Download Simple Server For Symbian Users

Android user Download Simple Server here

You can also comment and share to your friends,

Is work perfectly and like jet speed incase if you have a problem or confuse during configure it on your PC.

You can contact me or find me via +2348094994773 ...

Enjoy the downloading speed....

How to browse UNLIMITED Using MTN BIS on PC & Android Phone Using SimpleServer @100

How to Use MTN BIS on PC & Android Phone Using SimpleServer

As you all know MTN still rocks flawlessly with Simple Server and TunnelGuru on PC and Android. And if you have huge files to download like season movies, OS etc, then you can use MTN Daily BIS as it is unlimited with Simple Server.

How Can I Get it working on PC?

==> Firstly Download simple server for PC here.

==> Extract the downloaded file and open the extracted file folder, click on the ‘Simpler Servers.exe and run the application.

==> Load N100 on your MTN line and send BBCDAY to 21600 , when activated slot the SIM into your modem >>Connect it to your PC then After receiving the welcome to Mtn Bis message, Go to setting on your Modem and configure your modem.

APN: web.gprs.mtnnigeria.net

Username  & Password : web >>

>> Also configure your browser and IDM to 127.0.0.1, port 8080 .

Open your browser and start surfing and downloading.

How Can I get it Working on Android?
==>Firstly Download Android simple server app here.

==> Install it on your Android

==>Create New APN settings On Your Phone As Follows.

Proxy: 127.0.0.1

Port: 8080

APN: Web.gprs.mtnnigeria.net

Save And Activate it simpleserver your default settings.

Go to simple server and configure the settings:

==>Pproxy host: 10.199.212.2

==>Proxy Port: 8080

==>Injection Method: get

==>Injection querry/url: http://web.blackberry.com

==>Injection Host: web.blackberry.com

==>Injection line: press your enter key 4 times

==>Log leve: debug Close the settings and click the connect button.

Connect and start surfing with your BBCDay on PC.

Do you know you can download anything you want for 24hrs until your unlimited plan time elapses and it will cost you just 100 naira to re activate the plan. Or use already activated monthly BIS Plan. Daily rocks unlimited.

Enjoy and share it to your friends...

For more help........... +2348094994773

Average cost of a 128GB SSD is now $50 for PC makers

Samsung's 850EVO SSD uses triple-level cell (TLC) NAND. TLC memory reduces the cost to produce SSDs, one of the reasons flash drives have dropped dramatically in price. Credit: Samsung

SSDs have crept up on hard drives in notebooks and claim 30% of that market

by: Odubanjo bolarinwa

The average price that computer manufacturers pay for a 128GB solid-state drive (SSD) dropped to $50 in the second quarter, while the average price of a 256GB SSD plunged to almost $90, according to research from DRAMeXchange.
Those prices are significant drops when compared to pricing in the first quarter of 2014, when a 128GB SSD had an average price of $77.20, and a 256GB SSD sold for $148. The decline has been steady, quarter after quarter, since then, according to DRAMeXchange data.
Of course, that's not what you or I would pay. The average retail price that consumers pay for a 128GB SSD is $91.55, and for an SSD in the 240GB to 256GB range, the price is about $165.34, DRAMeXchange's data showed.

Toshiba

The largest producer of NAND flash, Toshiba, announced this year the development of the first 48-layer, three-dimensional flash memory. The densest NAND to date.

Still, that's significantly less than what you would have paid two years ago or even a year ago, according to Jim Handy, principal analyst at Objective Analysis.
"Flash prices have been in a slow decline for the past year. They have come down about 25% since last June. Flash accounts for around 80% of the cost of the average drive, but remember that it's a higher share of higher-capacity SSDs, and a lower share of low-capacity SSDs," Handy said in an email reply to Computerworld.

The price for client-SSDs used by computer manufacturers has dropped steadily over the past year.

There are two components to SSD pricing, the flash memory cost and then the other components, such as the controller or integrated circuit that manages the read and write commands from the computer.
Other than increased SSD adoption, which spurs production and results in economies of scale and lower costs, there has been a conversion over the past few years from flash that stores two bits per transistor to products that store three bits. The more dense NAND flash memory is, the less it costs to produce SSDs with the same or more capacity.
The conversion from two-bit or multi-level cell (MLC) flash to triple-level cell (TLC) flash has dropped costs about 20% over the past year, Handy said.
"Controller prices seem to be falling at something closer to Moore's Law, or about 30%," Handy said.

Shrinking NAND size leads to lower cost

The latest research from DRAMeXchange, a division of TrendForce, indicates prices for internal SSDs are declining at an accelerated pace as the production of NAND flash also migrates to the 15 and 16 nanometer manufacturing processes. Previously, the width of transistors were in the 19-plus nanometer range: More density, lower production costs.
Flash manufacturers have also been stacking NAND flash transistors vertically -- so-called 3D NAND flash -- which further adds to its density and lowers production costs.
In the third quarter), the ratio of 3D-NAND flash products in shipments will start to increase and the market penetration of notebook SSDs will speed up. According to DRAMeXchange's projection, notebook SSDs' market penetration will be more than 30% for 2015 and will surpass 50% by 2017, taking over from hard drives that currently dominate the notebook sector.
"The [system manufacturer] market for client-SSDs has experienced a rapid price decline due to the increasing adoption of SSDs based on triple level cell (TLC) technology," said DRAMeXchange's assistant vice president Sean Yang. "Among the OEMs, Samsung Electronics Co. especially has been aggressively promoting TLC-based SSDs since their memory chips and controller chips are developed in house."

Toshiba

Toshiba calls its news 3D flash architecture BiCS (Bit Cost Scaling). The new flash memory stores two bits of data per transistor, meaning it's a multi-level cell (MLC) flash chip. It can store 128Gbits (16GB) per chip. This diagram illustrates how Toshiba and SanDisk's BiCS 3D NAND technology is structured.

Starting in 2014, the rising price-performance ratios of Samsung's TLC products have led to a rapid expansion of their share in the system manufacturer market for PCs.
Additionally, SSDs that incorporate both 3D NAND and TLC technologies have completed the client verification process in the first half of 2015 and are set to begin mass production and shipments in the second quarter.
Shipments of TLC products will grow faster in the second half of 2015 when Intel Corp. introduces its latest processor platform, Skylake. Hence, other SSD vendors will be in a hurry to develop their TLC-based SSD products, and this in turn will drive the transition of NAND flash production to the 15nm and 16nm processing technologies.
DRAMeXchange expects TLC-based SSDs using NAND flash from suppliers besides Samsung will be sent to PC manufacturers for testing in the third and fourth quarter.

A push for faster interfaces

Intel is also becoming more active in ensuring its processors support different SSD architectures via different interfaces.
Another bit of good news for users is that chip manufacturers are ramping up production of higher speed interfaces based on the PCIe serial bus standard. According to DRAMeXchange, PCIe SSDs are steadily making inroads in the market that is dominated by interfaces belonging to the mature SATA 3.0 technology.
Both the MacBook Pro and MacBook Air laptop models adopted PCIe in 2014, encouraging other PC-manufacturers to design products with the same interface and urging NAND flash suppliers to develop SSDs that match the application.
The market penetration of PCIe interfaces is expected to reach around 20% over the next year, based on DRAMeXchange's projection.
With Skylake and subsequent Intel processor platforms supporting SSDs with PCIe interfaces, SSD controller chip vendors will roll out more related, price-competitive integrated circuits. The SSD market therefore will see a noticeable increase in the share of products with PCIe interfaces next year.

Fab plants are now making superfast carbon nanotube memory

by: Odubanjo Bolarinwa

A depiction of what an NRAM chip would look like. Credit: Nantero

NRAM has an almost infinite number of write cycles, and is thousands of times faster than flash

A new type of non-volatile memory known as Nano-RAM (NRAM) -- it's based on carbon nanotube and sports DRAM speed -- is now being produced in seven fabrication plants in various parts of the world.
According to Nantero, the company that invented NRAM, it also has more than a dozen corporate customers lined up to begin experimenting with the memory once it begins rolling off production lines.
"So those fabs have been and are indeed producing large numbers of wafers and chips," said Greg Schmergel, CEO of Nantero. "They are sample chips/test chips in preparation for mass production, which requires the product designs to be completed."
Schmergel said it will likely take a couple more years before NRAM drives begin rolling off production lines.

Nantero

The geometric construct of a carbon nanotube.

"This is one of very few technologies that's moved beyond the research lab into high-volume manufacturing CMOS facilities," Greg Wong, principal analyst at Forward Insights, said in a statement. "NRAM's unique combination of high speed and high endurance has the potential to enable innovative products in a host of consumer and enterprise applications."
NRAM has the potential to create memory that is vastly more dense that NAND flash, which is used to make thumb drives and solid-state drives today. The densest NAND flash process today is near 15 nanometers. NRAM can reach densities of below 5 nanometers, according to Schmergel.
NRAM is up against an abundant field of new memory technologies that are expected to challenge NAND flash in speed, endurance and capacity, according to Jim Handy, principal analyst with semiconductor research firm Objective Analysis.
For example, Ferroelectric RAM (FRAM) has shipped in high volume, IBM has developed Racetrack Memory, Intel, IBM and Numonyx have all produced Phase-Change Memory (PCM), Magnetoresistive Random-Access Memory (MRAM) has been under development since the 1990s, Hewlett-Packard and Hynix have been developing ReRAM also called Memristor, and Infineon Technologies has been developing Conductive-Bridging RAM (CBRAM).
"It’s really very difficult to project which horse will win the race to become the replacement for NAND flash and DRAM in 2023 or so when we anticipate that change, this juncture is so far off," Handy said.
Over the past two years, Nantero has been able to reduce NRAM production costs 10-fold, making it compatible with complementary metal-oxide-semiconductor (CMOS), the standard used for making microprocessors and DRAM.
One big advantage NRAM has over traditional NAND flash is its resistance to heat. It can withstand up to 300 degrees Celsius. Nantero claims its memory can last thousands of years at 85 degrees Celcius and has been tested at 300 degrees Celsius for 10 years. Not one bit of data was lost.

Nantero

An illustration of the NRAM cell (left) and photos taken of the carbon nanotube fabric with an electronmicroscop (right).

Anpther advantage is that NRAM is being built using the DDR4 specification interface, so it could sport up to 3.2 billion data transfers per second or 2,400 Mbps -- more than twice as fast as NAND flash. Natively, however, the NRAM's read/write capability is thousands of times faster than NAND flash, Schmergel said; the bottleneck is the computer BUS interface.
"Nanotube switch [states] in picoseconds -- going off to on and on to off," Schmergal said. A picosecond is one trillionth of a second.

Nantero

Carbon nanotubes are strong -- very strong. In fact, they're 50 times stronger than steel, and they're only 1/50,000th the size a human hair. Because of carbon nanotubes' strength, NRAM has far greater write endurance compared to NAND flash.
The best NAND flash, with error correction code, can withstand about 100,000 erase-write cycles. According to Nantero, NRAM can withstand 10¹² write cycles and 10¹⁵ read cycles -- an almost infinite number.
"Heat and vibration also will not cause errors," Schmergel said.

How NRAM works

Carbon nanotubes are grown from catalyst particles -- most commonly iron.
NRAM is made up of an interlocking fabric matrix of carbon nanotubes that can either be touching or slightly separated. Each NRAM "cell" or transistor is made up the network of the carbon nanotubes that exist between two metal electrodes. The memory acts the same way as other resistive non-volatile RAM technologies.
Carbon nanotubes that are not in contact with each other are in the high resistance state that represents the "off" or "0" state. When the carbon nanotube contact each other, they take on the low-resistance state of "on" or "1."

Nantero

An illustration showing the two states of NRAM, where one carbon nanotube is either touching another, creaing a low reisistance or "on" state; the other, where the tubes are not touching, creating a high resistance or "off" state.

Over the past few months, Nantero has hired more than a dozen chip design engineers who are working to create high density circuits, including three dimensional or stacked designs for increased capacity.
"If you're taking a gum stick, then your talking about many gigabytes of capacity -- terabytes in the future," Schmergel said.
Nantero doesn't plan on producing its own NRAM drives, which will initially be marketed for purposes similar to solid-state drive (SSD) gum sticks or internal memory boards. But it will license its intellectual property to companies to develop their own product. Nantero's engineers are still in the process of creating chip designs for the memory wafers.
Because of its resilience to heat, vibration and pressure, Nantero's carbon nanotube memory has caught the eye of aerospace giant Lockheed Martin and Schlumberger Ltd., the world's largest gas and oil exploration and drilling company; both companies are customers of Nantero.
Nantero declined to name its other customers.
"Clearly a company like [Schlumberger] would have need of memory that could perform in environments with very high heat down in an oil well," Schmerge said.
Founded in 2001, Nantero has to date generated $78.1 million in five rounds of funding, including a series E round for $31.5 million that it just closed. The company also announced that the former vice president of Intel's Flash Memory Group, Stefan Lai, has joined the company as a technical advisor. Lai co-invented the EPROM (erasable programmable read only memory) flash memory cell and led the Intel's phase change memory (PCM) development team.
"Nantero's NRAM has unique attributes that make it the most promising candidate to be the almost ideal memory: the nonvolatility of Flash, and the speed and functionality of DRAM with lower cost," Lai said.
Nantaro also announced that Yaw Wen Hu, a former executive vice president at Inotera Memories, has also come on board as a technical advisor. Inotera, a Taiwan-based partner of Micron, supplies nearly 10% of the world's 300mm DRAM silicon wafers at its two fabrication facilities.
"The availability of memory technology that is extremely fast, can deliver terabits of storage capacity in the future and consumes very little power, has the potential to change the future of electronics," said Alan, Niebel, CEO of Webfeet Research. "After researching NRAM for over twelve years, WebFeet applauds Nantero for reducing the costs of the CNTs in an NRAM chip by 10x in the last two years, making NRAM CMOS compatible and finally proving NRAM viability with commercial production capability from its licensees."